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Ferromagnetic resonance of Ga0.93Mn0.07As thin films with constant Mn and variable free-hole concentrations

Kh. Khazen, H. J. von Bardeleben, J. L. Cantin, L. Thevenard, L. Largeau, O. Mauguin, and A. Lemaître
Phys. Rev. B 77, 165204 – Published 11 April 2008

Abstract

The magnetic properties of ferromagnetic Ga0.93Mn0.07As thin films have been investigated by X-band ferromagnetic resonance (FMR) spectroscopy as a function of hole concentration. The hole concentration [p] was varied from 1021to<1018cm3 by hydrogen passivation. We determined the limit for the onset of ferromagnetism as [p]1×1019cm3, the critical temperatures as a function of hole concentration, and the easy and hard axes for magnetization as a function of temperature and hole concentration. The temperature and hole concentration dependences of the magnetocrystalline anisotropy constants were determined. The dominant constant K2 changes for T=4K from 8×104to+1×104ergcm3 with decreasing the hole concentration. The anisotropy coefficient κ2 varies with the reduced magnetization with an expected quadratic power law. The effective g factor is different from the paramagnetic value of Mn2+ of g=2.00, due to the hole contribution; it changes from 1.90 to 1.97 with decreasing the hole concentration. In addition to the resonance positions, the FMR linewidth and intensity were analyzed. The FMR linewidth varies with the inverse of the hole concentration. Free energy surfaces are calculated for the simulation of magnetization switching.

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  • Received 3 November 2007

DOI:https://doi.org/10.1103/PhysRevB.77.165204

©2008 American Physical Society

Authors & Affiliations

Kh. Khazen, H. J. von Bardeleben, and J. L. Cantin

  • Institut des NanoSciences de Paris (INSP), Université Paris 6, UMR 7588 au CNRS, 140, rue de Lourmel, 75015 Paris, France

L. Thevenard, L. Largeau, O. Mauguin, and A. Lemaître

  • Laboratoire de Photonique et de Nanostructures, CNRS/LPN, Route de Nozay, 91460 Marcoussis, France

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Vol. 77, Iss. 16 — 15 April 2008

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