Kinetic phase diagram for island nucleation and growth during homoepitaxy

P. A. Mulheran and M. Basham
Phys. Rev. B 77, 075427 – Published 26 February 2008

Abstract

The impact of small-island dissociation and mobility on island nucleation and growth during vapor deposition of thin films is analyzed using mean field rate equations. The dominant island nucleation and growth mechanism is mapped onto a temperature/deposition-rate kinetic phase diagram, using Cu(100) homoepitaxy as an example. The methodology provides analytical expressions for the boundaries on the diagram and encourages a deeper understanding of the growth mechanisms. A kinetic Monte Carlo simulation incorporating the small-island dynamics is also presented and used to test the kinetic phase diagram, and satisfactory agreement is found throughout.

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  • Received 29 May 2007

DOI:https://doi.org/10.1103/PhysRevB.77.075427

©2008 American Physical Society

Authors & Affiliations

P. A. Mulheran1 and M. Basham2

  • 1Department of Chemical and Process Engineering, University of Strathclyde, James Weir Building, 75 Montrose Street, Glasgow G1 1XJ, United Kingdom
  • 2Department of Physics, University of Reading, Whiteknights, Reading RG6 6AF, United Kingdom

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Issue

Vol. 77, Iss. 7 — 15 February 2008

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