Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons

H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi
Phys. Rev. B 77, 075413 – Published 15 February 2008

Abstract

Low-energy electron microscopy (LEEM) was used to measure the reflectivity of low-energy electrons from graphitized SiC(0001). The reflectivity shows distinct quantized oscillations as a function of the electron energy and graphite thickness. Conduction bands in thin graphite films form discrete energy levels whose wave vectors are normal to the surface. Resonance of the incident electrons with these quantized conduction band states enhances electrons to transmit through the film into the SiC substrate, resulting in dips in the reflectivity. The dip positions are well explained using tight-binding and first-principles calculations. The graphite thickness distribution can be determined microscopically from LEEM reflectivity measurements.

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  • Received 13 February 2007

DOI:https://doi.org/10.1103/PhysRevB.77.075413

©2008 American Physical Society

Authors & Affiliations

H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi

  • NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

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Issue

Vol. 77, Iss. 7 — 15 February 2008

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