Valence band orbital polarization in III-V ferromagnetic semiconductors

A. A. Freeman, K. W. Edmonds, G. van der Laan, R. P. Campion, A. W. Rushforth, N. R. S. Farley, T. K. Johal, C. T. Foxon, B. L. Gallagher, A. Rogalev, and F. Wilhelm
Phys. Rev. B 77, 073304 – Published 14 February 2008

Abstract

The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the AsK absorption edge, yielding an As4p orbital magnetic moment of around 0.1μB per valence band hole, which is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the GaK edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn4p states to the MnK edge spectra.

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  • Received 13 December 2007

DOI:https://doi.org/10.1103/PhysRevB.77.073304

©2008 American Physical Society

Authors & Affiliations

A. A. Freeman1, K. W. Edmonds1, G. van der Laan2,3, R. P. Campion1, A. W. Rushforth1, N. R. S. Farley1, T. K. Johal2, C. T. Foxon1, B. L. Gallagher1, A. Rogalev4, and F. Wilhelm4

  • 1School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 2STFC Daresbury Laboratory, Warrington WA4 4AD, United Kingdom
  • 3Diamond Light Source, Didcot OX11 0DE, United Kingdom
  • 4European Synchrotron Radiation Facility, Boîte Postale 220, F-38043 Grenoble Cedex 9, France

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Issue

Vol. 77, Iss. 7 — 15 February 2008

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