Band anticrossing in highly mismatched SnxGe1x semiconducting alloys

K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz
Phys. Rev. B 77, 073202 – Published 8 February 2008

Abstract

We show that at dilute Sn concentrations (x<10%), the composition dependence of the direct band gap and spin-orbit splitting energies of SnxGe1x can be described by a valence band anticrossing model. Hybridization of the extended and localized p-like states of the Ge host matrix and the Sn minority atoms, respectively, leads to a restructuring of the valence band into E+ and E subbands. The notably large reduction in the band gap follows from an upward shift in the valence band edge by approximately 22meV per x=0.01. These results demonstrate that like III-V and II-VI compound semiconductors, group IV elements may form highly mismatched alloys in which the band anticrossing phenomenon is responsible for their unique properties.

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  • Received 13 August 2007

DOI:https://doi.org/10.1103/PhysRevB.77.073202

©2008 American Physical Society

Authors & Affiliations

K. Alberi1,2, J. Blacksberg3, L. D. Bell3, S. Nikzad3, K. M. Yu1, O. D. Dubon1,2, and W. Walukiewicz1

  • 1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 2Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  • 3Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA

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Issue

Vol. 77, Iss. 7 — 15 February 2008

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