Origins of 1f noise in individual semiconducting carbon nanotube field-effect transistors

David Tobias, Masa Ishigami, Alexander Tselev, Paola Barbara, Ellen D. Williams, Christopher J. Lobb, and Michael S. Fuhrer
Phys. Rev. B 77, 033407 – Published 11 January 2008

Abstract

The temperature dependence of 1f noise in individual semiconducting carbon nanotube (CNT) field-effect transistors is used to estimate the distribution of activation energies of the fluctuators D(E) responsible for the noise. D(E) shows a rise at low energy with no characteristic energy scale, and a broad peak at 0.4eV. The peak, responsible for the majority of noise at room temperature, cannot be due to electronic excitations, carrier number fluctuations, or structural fluctuations of the CNT, and likely results from the motion of defects in the dielectric or at the CNT-dielectric interface, or very strongly physisorbed species (binding energy 0.4eV) on the CNT or dielectric surface.

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  • Received 12 August 2007

DOI:https://doi.org/10.1103/PhysRevB.77.033407

©2008 American Physical Society

Authors & Affiliations

David Tobias1,2, Masa Ishigami1,2, Alexander Tselev3, Paola Barbara3, Ellen D. Williams1,2, Christopher J. Lobb1,2,4, and Michael S. Fuhrer1,2,*

  • 1Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA
  • 2Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA
  • 3Department of Physics, Georgetown University, Washington DC 20057, USA
  • 4Joint Quantum Institute, University of Maryland, College Park, Maryland 20742-4111, USA

  • *Author to whom correspondence should be addressed; mfuhrer@umd.edu

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Issue

Vol. 77, Iss. 3 — 15 January 2008

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