Conduction-band crossover induced by misfit strain in InSbGaSb self-assembled quantum dots

S. I. Rybchenko, R. Gupta, K. T. Lai, I. E. Itskevich, S. K. Haywood, V. Tasco, N. Deguffroy, A. N. Baranov, and E. Tournié
Phys. Rev. B 76, 193309 – Published 20 November 2007

Abstract

We address the occurrence of conduction-band crossover in III-V self-assembled quantum dots solely due to misfit strain. Band structure analysis in terms of standard deformation-potential theory shows that ΓX crossover can occur in the dot, while both ΓX and ΓL crossovers are possible in the matrix at the interface. Crossover changes the nature of the fundamental band gap in the heterostructure, which may dramatically affect the optical properties. The implications of this are studied for a realistic InSbGaSb (001) heterostructure, where ΓL crossover renders the ground-state optical transition indirect in k space. Our calculations and photoluminescence data are in remarkable agreement.

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  • Received 23 August 2007

DOI:https://doi.org/10.1103/PhysRevB.76.193309

©2007 American Physical Society

Authors & Affiliations

S. I. Rybchenko, R. Gupta, K. T. Lai, I. E. Itskevich, and S. K. Haywood

  • Department of Engineering, University of Hull, Hull HU6 7RX, United Kingdom

V. Tasco, N. Deguffroy, A. N. Baranov, and E. Tournié

  • Institut d’Electronique du Sud, Université Montpellier 2-CNRS, UMR 5214, Place Eugène Bataillon, F-34095 Montpellier Cedex, France

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Issue

Vol. 76, Iss. 19 — 15 November 2007

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