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Weak localization in Ga1xMnxAs: Evidence of impurity band transport

L. P. Rokhinson, Y. Lyanda-Geller, Z. Ge, S. Shen, X. Liu, M. Dobrowolska, and J. K. Furdyna
Phys. Rev. B 76, 161201(R) – Published 12 October 2007

Abstract

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor Ga1xMnxAs, x=0.050.08, at low temperatures (T<3K) and low magnetic fields (0<B<20mT). We attribute this effect to weak localization. Observation of weak localization strongly suggests impurity band transport in these materials, since for valence band transport one expects either weak antilocalization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interaction effects in this material.

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  • Received 28 February 2007

DOI:https://doi.org/10.1103/PhysRevB.76.161201

©2007 American Physical Society

Authors & Affiliations

L. P. Rokhinson and Y. Lyanda-Geller

  • Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA

Z. Ge, S. Shen, X. Liu, M. Dobrowolska, and J. K. Furdyna

  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

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Issue

Vol. 76, Iss. 16 — 15 October 2007

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