Experimental investigation of electronic properties of buried heterointerfaces of LaAlO3 on SrTiO3

Wolter Siemons, Gertjan Koster, Hideki Yamamoto, Theodore H. Geballe, Dave H. A. Blank, and Malcolm R. Beasley
Phys. Rev. B 76, 155111 – Published 17 October 2007

Abstract

We have made very thin films of LaAlO3 on TiO2 terminated SrTiO3 and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of 1016cm2 and a mobility around 104cm2V1s1. In situ ultraviolet photoelectron spectroscopy (UPS) indicates that for these samples a finite density of states exists at the Fermi level. From the oxygen pressure dependence measured in both transport as well as the UPS, we detail, as reported previously by us, that oxygen vacancies play an important role in the creation of the charge carriers and that these vacancies are introduced by the pulsed laser deposition process used to make the heterointerfaces. Under the conditions studied the effect of LaAlO3 on the carrier density is found to be minimal.

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  • Received 23 May 2007

DOI:https://doi.org/10.1103/PhysRevB.76.155111

©2007 American Physical Society

Authors & Affiliations

Wolter Siemons1,2, Gertjan Koster1,*, Hideki Yamamoto1,3, Theodore H. Geballe1, Dave H. A. Blank2, and Malcolm R. Beasley1

  • 1Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
  • 2Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands
  • 3NTT Basic Research Laboratories, 3-1 Wakamiya Morinosato, Atsugi-shi, Kanagawa, 243-0198, Japan

  • *Author to whom correspondence should be addressed; g.koster@utwente.nl

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Issue

Vol. 76, Iss. 15 — 15 October 2007

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