Abstract
We have made very thin films of on terminated and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of and a mobility around . In situ ultraviolet photoelectron spectroscopy (UPS) indicates that for these samples a finite density of states exists at the Fermi level. From the oxygen pressure dependence measured in both transport as well as the UPS, we detail, as reported previously by us, that oxygen vacancies play an important role in the creation of the charge carriers and that these vacancies are introduced by the pulsed laser deposition process used to make the heterointerfaces. Under the conditions studied the effect of on the carrier density is found to be minimal.
- Received 23 May 2007
DOI:https://doi.org/10.1103/PhysRevB.76.155111
©2007 American Physical Society