Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution

D. Karaiskaj, A. Mascarenhas, J. F. Klem, K. Volz, W. Stolz, M. Adamcyk, and T. Tiedje
Phys. Rev. B 76, 125209 – Published 25 September 2007

Abstract

High resolution photoluminescence (PL) spectroscopy was performed on high quality bulk GaAs, lightly doped with the nitrogen isoelectronic impurity. The shallowest nitrogen pair bound exciton center labeled as X1 revealed a total of six transitions. The photoluminescence lines from a small ensemble of nitrogen centers showed polarization dependent intensity. High spectral resolution PL spectroscopy was combined with confocal spectroscopy experiments performed on a GaAs:NAlGaAs heterostructure. The high spatial resolution achieved by this technique enables us to localize and examine individual nitrogen bound excitons. Similar spectral structure and polarization dependence was observed for individual N-pair centers in GaAs. Both techniques support the C2v symmetry of such isoelectronic impurity centers. The comparison between the PL spectra from an ensemble of nitrogen pairs and individual centers demonstrate the ability of the single impurity technique to lift the orientational degeneracy.

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  • Received 22 June 2007

DOI:https://doi.org/10.1103/PhysRevB.76.125209

©2007 American Physical Society

Authors & Affiliations

D. Karaiskaj and A. Mascarenhas

  • National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA

J. F. Klem

  • Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

K. Volz and W. Stolz

  • Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften der Philipps-Universität, Renthof 5, D-35032 Marburg, Germany

M. Adamcyk and T. Tiedje

  • AMPEL, Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia, Canada V6T 1Z4

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Issue

Vol. 76, Iss. 12 — 15 September 2007

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