Electronic interface reconstruction at polar-nonpolar Mott-insulator heterojunctions

Wei-Cheng Lee and A. H. MacDonald
Phys. Rev. B 76, 075339 – Published 22 August 2007

Abstract

We report on a theoretical study of the electronic interface reconstruction (EIR) induced by polarity discontinuity at a heterojunction between a polar and a nonpolar Mott insulator, and of the two-dimensional strongly correlated electron systems (2DSCESs) which accompany the reconstruction. We derive an expression for the minimum number of polar layers required to drive the EIR, and discuss key parameters of the heterojunction system which control 2DSCES properties. The role of strong correlations in enhancing confinement at the interface is emphasized.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 24 May 2007

DOI:https://doi.org/10.1103/PhysRevB.76.075339

©2007 American Physical Society

Authors & Affiliations

Wei-Cheng Lee* and A. H. MacDonald

  • Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

  • *leewc@mail.utexas.edu
  • macd@physics.utexas.edu

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 76, Iss. 7 — 15 August 2007

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×