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Electrical tuning of the g factor of single self-assembled quantum dots

T. Nakaoka, S. Tarucha, and Y. Arakawa
Phys. Rev. B 76, 041301(R) – Published 3 July 2007

Abstract

The g factor of a single self-assembled quantum dot is tuned by applying an electrical bias voltage. Individual InGaAs quantum dots embedded in a stripe mesa structure sandwiched by Schottky electrodes are studied by photoluminescence measurements. We find that under applied magnetic field a dot with an asymmetric shift for applied bias voltage shows an increase of the exciton g-factor absolute value by about 8%, while most of the dots with relatively symmetric shifts show no significant change. The anomalous g-value increase is discussed in terms of the Kondo effect.

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  • Received 22 May 2007

DOI:https://doi.org/10.1103/PhysRevB.76.041301

©2007 American Physical Society

Authors & Affiliations

T. Nakaoka1, S. Tarucha2,3, and Y. Arakawa1

  • 1Institute of Industrical Science, University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan
  • 2Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 3ICORP Quantum Spin Project, Japan Science and Technology Agency, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan

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Issue

Vol. 76, Iss. 4 — 15 July 2007

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