Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices

N. A. Goncharuk, L. Smrčka, P. Svoboda, P. Vašek, J. Kučera, Yu. Krupko, and W. Wegscheider
Phys. Rev. B 75, 245322 – Published 20 June 2007

Abstract

The magnetoresistance of the molecular beam epitaxy grown GaAsAl0.3Ga0.7As superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state and after brief illumination by a red-light diode at low temperature, T0.3K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlattice Fermi surface topology. Analysis of magnetoresistance data in terms of the tight-binding model reveals that not only electron concentration and mobility have been increased by illumination, but also that the coupling among two-dimensional electron layers in neighboring quantum wells has been reduced.

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  • Received 31 January 2007

DOI:https://doi.org/10.1103/PhysRevB.75.245322

©2007 American Physical Society

Authors & Affiliations

N. A. Goncharuk, L. Smrčka, P. Svoboda, P. Vašek, and J. Kučera

  • Institute of Physics, Academy of Science of the Czech Republic, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic

Yu. Krupko

  • Grenoble High Magnetic Field Laboratory, CNRS, 25 Avenue des Martyrs, Boîte Postale 166, 38042 Grenoble Cedex 9, France

W. Wegscheider

  • University of Regensburg, Universitästrasse 31, D-93040 Regensburg, Germany

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Issue

Vol. 75, Iss. 24 — 15 June 2007

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