Pulse-induced acoustoelectric vibrations in surface-gated GaAs-based quantum devices

S. Rahman, T. M. Stace, H. P. Langtangen, M. Kataoka, and C. H. W. Barnes
Phys. Rev. B 75, 205303 – Published 2 May 2007

Abstract

We present the results of a numerical investigation which show the excitation of acoustoelectric modes of vibration in GaAs-based heterostructures due to sharp nanosecond electric-field pulses applied across surface gates. In particular, we show that the pulses applied in quantum information processing applications are capable of exciting acoustoelectric modes of vibration including surface acoustic modes which propagate for distances greater than conventional device dimensions. We show that the pulse-induced acoustoelectric vibrations are capable of inducing significant undesired perturbations to the evolution of quantum systems.

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  • Received 27 December 2006

DOI:https://doi.org/10.1103/PhysRevB.75.205303

©2007 American Physical Society

Authors & Affiliations

S. Rahman1,*, T. M. Stace2, H. P. Langtangen3, M. Kataoka1, and C. H. W. Barnes1

  • 1Cavendish Laboratory, Cambridge University, J J Thomson Avenue, Cambridge CB3 OHE, United Kingdom
  • 2Centre for Quantum Computation, DAMTP, Centre for Mathematical Sciences, Cambridge University, Wilberforce Road, Cambridge CB3 0WA, United Kingdom
  • 3Simula Research Laboratory, Martin Linges v 17, Fornebu, P.O. Box 134, 1325 Lysaker, Norway

  • *Electronic address: S.Rahman.00@cantab.net

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Vol. 75, Iss. 20 — 15 May 2007

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