Crystal field analysis and emission cross sections of Ho3+ in the locally disordered single-crystal laser hosts M+Bi(XO4)2 (M+=Li,Na; X=W,Mo)

A. Méndez-Blas, M. Rico, V. Volkov, C. Zaldo, and C. Cascales
Phys. Rev. B 75, 174208 – Published 24 May 2007
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Abstract

The spectroscopic properties of Ho3+ laser channels in locally disordered tetragonal NaBi(WO4)2 (NaBiW), NaBi(MoO4)2 (NaBiMo), and LiBi(MoO4)2 (LiBiMo) single crystals grown by the Czochralski method have been studied in the 5300K temperature range using several holmium concentrations [Ho]0.050.6×1020cm3. Here 5K polarized optical absorption and photoluminescence measurements have been used to determine the energy position of 85, 56, and 39 Ho3+ Stark levels in NaBiW, NaBiMo, and LiBiMo crystals, respectively. These energy levels were labeled with irreducible representations corresponding to the S4 local symmetry of an average optical center. Single-electron Hamiltonians combining together free-ion and crystal-field interactions have been used in the fit of experimental energy levels and in the simulation of the corresponding 4f10 Ho3+ configuration for NaBiW and NaBiMo crystals. Very satisfactory correlations were obtained between experimental and calculated crystal-field levels, with rms deviations σ=8.8 and 7.3cm1 for NaBiW and NaBiMo, respectively. The radiative properties and emission cross sections of Ho3+ laser channels in these hosts were calculated by the Judd-Ofelt theory and compared with experimental results. The emission cross sections of Ho3+ in NaBiW are similar to those observed in other crystal laser hosts, and positive gain cross sections can be achieved in extended spectral ranges. These properties make the Ho3+-doped double tungstates and double molybdates feasible materials for tunable and short-pulse laser operation.

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  • Received 15 November 2006

DOI:https://doi.org/10.1103/PhysRevB.75.174208

©2007 American Physical Society

Authors & Affiliations

A. Méndez-Blas*, M. Rico, V. Volkov, C. Zaldo, and C. Cascales

  • Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, 28049 Madrid, Spain

  • *Present address Instituto de Física, Universidad Autónoma de Puebla. Apdo. Postal J-48. Puebla 72570 México.
  • Corresponding author: Concepción Cascales. FAX: 34 913720623. Electronic address: ccascales@icmm.csic.es

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Issue

Vol. 75, Iss. 17 — 1 May 2007

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