Abstract
We have investigated shot noise in a -diameter, semiconducting multiwalled carbon nanotube field effect transistor at over the frequency range of . We find a transconductance of for optimal positive and negative source-drain voltages . For the gate referred input voltage noise, we obtain 0.2 and for and , respectively. As effective charge noise, this corresponds to .
- Received 2 August 2006
DOI:https://doi.org/10.1103/PhysRevB.75.125419
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