Shot noise of a multiwalled carbon nanotube field effect transistor

Fan Wu, Taku Tsuneta, Reeta Tarkiainen, David Gunnarsson, Tai-Hong Wang, and Pertti J. Hakonen
Phys. Rev. B 75, 125419 – Published 21 March 2007

Abstract

We have investigated shot noise in a 6nm-diameter, semiconducting multiwalled carbon nanotube field effect transistor at 4.2K over the frequency range of 600950MHz. We find a transconductance of 33.5μS for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3μVHz for V>0 and V<0, respectively. As effective charge noise, this corresponds to (23)×105eHz.

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  • Received 2 August 2006

DOI:https://doi.org/10.1103/PhysRevB.75.125419

©2007 American Physical Society

Authors & Affiliations

Fan Wu1, Taku Tsuneta1, Reeta Tarkiainen1, David Gunnarsson1, Tai-Hong Wang2, and Pertti J. Hakonen1

  • 1Low Temperature Laboratory, Helsinki University of Technology, P.O. Box 2200, FIN-02015 HUT, Finland
  • 2Institute of Physics, Chinese Academy of Sciences, 100080, Beijing, China

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Issue

Vol. 75, Iss. 12 — 15 March 2007

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