Magnetoanisotropy of electron-correlation-enhanced tunneling through a quantum dot

E. E. Vdovin, Yu. N. Khanin, O. Makarovsky, Yu. V. Dubrovskii, A. Patanè, L. Eaves, M. Henini, C. J. Mellor, K. A. Benedict, and R. Airey
Phys. Rev. B 75, 115315 – Published 13 March 2007

Abstract

We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (2K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.

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  • Received 12 December 2006

DOI:https://doi.org/10.1103/PhysRevB.75.115315

©2007 American Physical Society

Authors & Affiliations

E. E. Vdovin1,2, Yu. N. Khanin2, O. Makarovsky1, Yu. V. Dubrovskii2,*, A. Patanè1, L. Eaves1,†, M. Henini1, C. J. Mellor1, K. A. Benedict1, and R. Airey3

  • 1School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 2Institute of Microelectronics Technology RAS, 142432 Chernogolovka, Russia
  • 3Department of Electronic & Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom

  • *Deceased.
  • Corresponding author. Electronic address: laurence.eaves@nottingham.ac.uk

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Issue

Vol. 75, Iss. 11 — 15 March 2007

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