Energy gap formation in the valence fluctuating compound CeIrSb probed by Sb NMR and NQR

Y. Kawasaki, M. Izumi, Y. Kishimoto, T. Ohno, H. Tou, Y. Inaoka, M. Sera, K. Shigetoh, and T. Takabatake
Phys. Rev. B 75, 094410 – Published 9 March 2007

Abstract

Sb NMR and NQR studies have revealed the formation of a pseudogap at the Fermi level in the density of states in a valence fluctuating compound CeIrSb. The nuclear spin-lattice relaxation rate divided by temperature, 1T1T, has a maximum around 300K and decreases significantly as 1T1TT2, followed by a 1T1T=const relation at low temperature. This temperature dependence of 1T1T is well reproduced by assuming a V-shaped energy gap with a residual density of states at the Fermi level. The size of energy gap for CeIrSb is estimated to be about 350K, which is by 1 order of magnitude larger than those for the isostructural Kondo semiconductors CeRhSb and CeNiSn. Despite the large difference in the size of energy gap, CeIrSb, CeRhSb, and CeNiSn are indicated to be classified into the same group revealing a V-shaped gap due to cf hybridization. The temperature dependence of the Knight shift measured in a high magnetic field agrees with the formation of this pseudogap.

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  • Received 22 October 2006

DOI:https://doi.org/10.1103/PhysRevB.75.094410

©2007 American Physical Society

Authors & Affiliations

Y. Kawasaki, M. Izumi, Y. Kishimoto, and T. Ohno

  • Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan

H. Tou, Y. Inaoka, M. Sera, and K. Shigetoh

  • ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan

T. Takabatake

  • ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan and IAMR, Hiroshima University, Higashi-Hiroshima 739-8530, Japan

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Vol. 75, Iss. 9 — 1 March 2007

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