Doping-driven Mott transition in the one-band Hubbard model

Philipp Werner and Andrew J. Millis
Phys. Rev. B 75, 085108 – Published 15 February 2007

Abstract

A powerful diagrammatic impurity solver is shown to permit a systematic study of the doping-driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean-field theory. At small dopings and large interaction strengths, we are able to access low enough temperatures that a reliable extrapolation to temperature T=0 may be performed, and ground state energies of insulating and metallic states may be compared. We find that the T=0 doping-driven transition is of second order and is characterized by an interaction-strength dependent electronic compressibility, which vanishes at the critical interaction strength of the half filled model. Over wide parameter ranges, the compressibility is substantially reduced relative to the noninteracting system. The metal-insulator transition is characterized by the appearance of in-gap states, but these are relevant only for very low dopings of less than 3%.

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  • Received 16 October 2006

DOI:https://doi.org/10.1103/PhysRevB.75.085108

©2007 American Physical Society

Authors & Affiliations

Philipp Werner and Andrew J. Millis

  • Columbia University, 538 West 120th Street, New York, New York 10027, USA

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Issue

Vol. 75, Iss. 8 — 15 February 2007

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