Abstract
We show that the band gap bowing trends observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within the framework of the valence-band anticrossing model. Hybridization of the extended -like states comprising the valence band of the host semiconductor with the close-lying localized -like states of Sb or Bi leads to a nonlinear shift of the valence-band edge and a reduction of the band gap. The two alloys and are explored in detail, and the results are extrapolated to additional systems.
- Received 26 May 2006
DOI:https://doi.org/10.1103/PhysRevB.75.045203
©2007 American Physical Society