Valence-band anticrossing in mismatched III-V semiconductor alloys

K. Alberi, J. Wu, W. Walukiewicz, K. M. Yu, O. D. Dubon, S. P. Watkins, C. X. Wang, X. Liu, Y.-J. Cho, and J. Furdyna
Phys. Rev. B 75, 045203 – Published 16 January 2007

Abstract

We show that the band gap bowing trends observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within the framework of the valence-band anticrossing model. Hybridization of the extended p-like states comprising the valence band of the host semiconductor with the close-lying localized p-like states of Sb or Bi leads to a nonlinear shift of the valence-band edge and a reduction of the band gap. The two alloys GaSbxAs1x and GaBixAs1x are explored in detail, and the results are extrapolated to additional systems.

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  • Received 26 May 2006

DOI:https://doi.org/10.1103/PhysRevB.75.045203

©2007 American Physical Society

Authors & Affiliations

K. Alberi1,2, J. Wu1,2, W. Walukiewicz1, K. M. Yu1, O. D. Dubon1,2, S. P. Watkins3, C. X. Wang3, X. Liu4, Y.-J. Cho4, and J. Furdyna4

  • 1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 2Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  • 3Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6
  • 4Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

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Issue

Vol. 75, Iss. 4 — 15 January 2007

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