Local equilibrium and global relaxation of strained SiGeSi(001) layers

M. Stoffel, A. Rastelli, J. Tersoff, T. Merdzhanova, and O. G. Schmidt
Phys. Rev. B 74, 155326 – Published 27 October 2006

Abstract

We investigate the morphological evolution of islands obtained by epitaxial growth of Ge on Si(001) substrates. We are able to obtain highly uniform distributions of SiGe islands, which exhibit a “barn” shape. In addition to previously observed facets, we identify higher index facets, which are not observed in dome-shaped islands. The evolution of the island-related facet area provides evidence of a transition from domes to steeper barns, which continues the sequence of coherent island types before the onset of plastic relaxation. For higher Ge coverages, when plastically relaxed islands (superdomes) form, the island ensemble loses its homogeneity. This is essentially the result of anomalous coarsening, with material being transferred from coherent islands to larger superdomes.

    • Received 23 August 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.155326

    ©2006 American Physical Society

    Authors & Affiliations

    M. Stoffel1,*, A. Rastelli1, J. Tersoff2, T. Merdzhanova1, and O. G. Schmidt1

    • 1Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart-Germany
    • 2IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA

    • *Electronic address: m.stoffel@fkf.mpg.de

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    Issue

    Vol. 74, Iss. 15 — 15 October 2006

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