Reply to “Comment on ‘Dynamics of thermal growth of silicon oxide films on Si’ ”

R. M. C. de Almeida, S. Gonçalves, I. J. R. Baumvol, and F. C. Stedile
Phys. Rev. B 74, 127302 – Published 8 September 2006

Abstract

In a Comment on “Dynamics of thermal growth of silicon oxide films on Si” [Phys. Rev. B 61, 12992 (2000)], Roura and Farjas argue that the values of the kinetics parameters obtained from the model proposed in that paper are not reliable and that the solutions given for different partial pressures are erroneous. Moreover, that the solution from such model is unable to predict the oxidation rate experimentally observed in the thin oxide regime neither the width of the interface. Resorting to experimental results, and old and new results obtained from our model, we show in this Reply that none of the criticisms are solid and that the results of the original paper represent indeed an improvement over the Deal-Grove model. Finally, motivated by one of the issues raised by Roura and Farjas, we present here new fittings of experimental data using our model together with experimental estimates for the interface width between the oxide layer and the silicon substrate. This turned a two parameter fitting problem into a much simpler one parameter procedure.

    • Received 5 May 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.127302

    ©2006 American Physical Society

    Authors & Affiliations

    R. M. C. de Almeida1, S. Gonçalves1,*, I. J. R. Baumvol1,3, and F. C. Stedile2

    • 1Instituto de Física, Universidade Federal do Rio Grande do Sul, Caixa Postal 15051, 91501-970 Porto Alegre, RS, Brazil
    • 2Instituto de Química, Universidade Federal do Rio Grande do Sul, Caixa Postal 15051, 91501-970 Porto Alegre, RS, Brazil
    • 3CCET, Universidade de Caxias do Sul, Caxias do Sul, RS, Brazil 95070-560

    • *Electronic address: sgonc@if.ufrgs.br

    Comments & Replies

    Comment on “Dynamics of thermal growth of silicon oxide films on Si”

    P. Roura and J. Farjas
    Phys. Rev. B 74, 127301 (2006)

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    Original Article

    Dynamics of thermal growth of silicon oxide films on Si

    R. M. C. de Almeida, S. Gonçalves, I. J. R. Baumvol, and F. C. Stedile
    Phys. Rev. B 61, 12992 (2000)

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    Issue

    Vol. 74, Iss. 12 — 15 September 2006

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