Electronic structure of antiferromagnetic LaMnO3 and the effects of charge polarization

Y. Nohara, A. Yamasaki, S. Kobayashi, and T. Fujiwara
Phys. Rev. B 74, 064417 – Published 17 August 2006

Abstract

The electronic structure of A-type antiferromagnetic insulator LaMnO3 is investigated by the GW approximation. The band gap and spectrum are in a good agreement with experimental observation. The lifetime of electrons in conduction bands is much shorter than that of holes in valence bands. The insulator-to-metal transition with antiferromagnetic-to-ferromagnetic transition with photocarrier injection is attributed to the characteristic properties of excited electron states in A-type antiferromagnetic perovskite systems. The onsite dd Coulomb interaction is strongly screened at the low energy region by mobile eg electrons.

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  • Received 1 September 2005

DOI:https://doi.org/10.1103/PhysRevB.74.064417

©2006 American Physical Society

Authors & Affiliations

Y. Nohara1, A. Yamasaki2, S. Kobayashi3, and T. Fujiwara1,4

  • 1Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
  • 2Max-Planck Institut für Festkörperforschung, Heisenbergstrasse 1, Stuttgart D-70569, Germany
  • 3Texas Instruments Japan Ltd., 6-24-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-8366, Japan
  • 4Core Research for Evolutional Science and Technology (CREST-JST), Japan Science and Technology Corporation (JST), Japan

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Issue

Vol. 74, Iss. 6 — 1 August 2006

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