Interband transitions in GaN0.02As0.98xSbxGaAs (0<x0.11) single quantum wells studied by contactless electroreflectance spectroscopy

R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and James S. Harris, Jr.
Phys. Rev. B 73, 245413 – Published 14 June 2006

Abstract

Interband transitions in GaN0.02As0.98xSbxGaAs single quantum wells (SQWs) with 0<x0.11 have been investigated by contactless electroreflectance (CER). CER features related to the ground and excited state transitions have been observed and compared with those obtained from theoretical calculations, which were performed in the framework of the effective mass formalism model. It has been concluded that these SQWs are type I and the conduction band offset for this material system decreases from 80% to 50% when the Sb composition is increased from 0% to 11%. It shows that the band gap discontinuity for GaNAsSbGaAs material system can be simply tuned by a change in Sb concentration.

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  • Received 27 December 2005

DOI:https://doi.org/10.1103/PhysRevB.73.245413

©2006 American Physical Society

Authors & Affiliations

R. Kudrawiec*, M. Gladysiewicz, and J. Misiewicz

  • Institute of Physics, Wrocław University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wrocław, Poland

H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and James S. Harris, Jr.

  • Solid State and Photonics Laboratory, Department of Electrical Engineering, 126X CISX, Via Ortega, Stanford University, Stanford, California 94305-4075, USA

  • *Present address: Solid State and Photonics Laboratory, Department of Electrical Engineering, 311X CISX, Via Ortega, Stanford University, Stanford, California 94305-4075, USA. Electronic address: kudrawiec@snow.stanford.edu

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Vol. 73, Iss. 24 — 15 June 2006

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