Abstract
Tight-binding molecular dynamics and density-functional simulations on silicon seeded with a di-interstitial reveal its detailed diffusion mechanisms. The lowest-energy di-interstitial performs a translation/rotation diffusion-step with a barrier of and a prefactor of followed by a reorientation diffusion step with a barrier and a prefactor. The intermediate reorientation steps allow di-interstitials to diffuse isotropically along all possible ⟨111⟩ bond directions in the diamond lattice. The dominating diffusion barrier of is not inconsistent with the experimental value of . In addition, this lowest energy di-interstitial may diffuse to neighboring sites through an intermediate structure which is the bound state of two single interstitials. The process in which migrating single interstitials combine into a di-interstitial is exothermic with almost zero energy barrier.
- Received 6 October 2005
DOI:https://doi.org/10.1103/PhysRevB.73.245203
©2006 American Physical Society