Diffusion mechanisms for silicon di-interstitials

Yaojun A. Du, Richard G. Hennig, and John W. Wilkins
Phys. Rev. B 73, 245203 – Published 12 June 2006

Abstract

Tight-binding molecular dynamics and density-functional simulations on silicon seeded with a di-interstitial reveal its detailed diffusion mechanisms. The lowest-energy di-interstitial performs a translation/rotation diffusion-step with a barrier of 0.3eV and a prefactor of 11THz followed by a reorientation diffusion step with a 90meV barrier and a 2300THz prefactor. The intermediate reorientation steps allow di-interstitials to diffuse isotropically along all possible ⟨111⟩ bond directions in the diamond lattice. The dominating diffusion barrier of 0.3eV is not inconsistent with the experimental value of 0.6±0.2eV. In addition, this lowest energy di-interstitial may diffuse to neighboring sites through an intermediate structure which is the bound state of two single interstitials. The process in which migrating single interstitials combine into a di-interstitial is exothermic with almost zero energy barrier.

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  • Received 6 October 2005

DOI:https://doi.org/10.1103/PhysRevB.73.245203

©2006 American Physical Society

Authors & Affiliations

Yaojun A. Du*, Richard G. Hennig, and John W. Wilkins

  • Department of Physics, Ohio State University, Columbus, Ohio 43210, USA

  • *Electronic address: dyj@mps.ohio-state.edu

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Issue

Vol. 73, Iss. 24 — 15 June 2006

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