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Spin-dependent edge-channel transport in a SiSiGe quantum Hall system

K. Hamaya, S. Masubuchi, K. Hirakawa, S. Ishida, Y. Arakawa, K. Sawano, Y. Shiraki, and T. Machida
Phys. Rev. B 73, 121304(R) – Published 23 March 2006

Abstract

We study the edge-channel transport of electrons in a high-mobility SiSiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction.

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  • Received 10 January 2006

DOI:https://doi.org/10.1103/PhysRevB.73.121304

©2006 American Physical Society

Authors & Affiliations

K. Hamaya1,*, S. Masubuchi1, K. Hirakawa1, S. Ishida2, Y. Arakawa2, K. Sawano3, Y. Shiraki3, and T. Machida1,4,†

  • 1Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
  • 2Nanoelectronics Collaborative Research Center (NCRC), IIS and RCAST, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
  • 3Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
  • 4Nanostructure and Material Property, PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan

  • *Email address: hamaya@iis.u-tokyo.ac.jp
  • Email address: tmachida@iis.u-tokyo.ac.jp

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Issue

Vol. 73, Iss. 12 — 15 March 2006

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