Radiative lifetime of a single electron-hole pair in GaNAlN quantum dots

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, and J. Massies
Phys. Rev. B 73, 113304 – Published 8 March 2006

Abstract

Wurtzite GaNAlN quantum dots (QDs) are studied by time-resolved photoluminescence. Careful measurements allow us to reach the regime of a single electron-hole pair per dot, evidenced by a monoexponential decay of the luminescence and a stop of the time-dependent shift of the emission energy. The transition energy and the radiative lifetime of the QD ground state are measured in the absence of any electric field screening effect, for a wide range of QD heights. These results are analyzed within an envelope function model for the electron and hole confinement. The effective electric field, averaged over the strain distribution in the dots, is determined to be of 9.0±0.5MVcm.

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  • Received 18 November 2005

DOI:https://doi.org/10.1103/PhysRevB.73.113304

©2006 American Physical Society

Authors & Affiliations

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, and B. Gil

  • Groupe d’Etude des Semiconducteurs–CNRS–Université Montpellier II, CC 074, Place Eugène Bataillon, F-34095 Montpellier Cedex 5, France

N. Grandjean*, F. Semond, B. Damilano, A. Dussaigne, and J. Massies

  • Centre de Recherche pour l’Hétéro-Epitaxie et ses Applications–CNRS, Rue Bernard Grégory, F-06560 Valbonne, France

  • *Present address: IPEQ-LASPE, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.

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Issue

Vol. 73, Iss. 11 — 15 March 2006

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