Recombination kinetics of InAs quantum dots: Role of thermalization in dark states

M. Gurioli, A. Vinattieri, M. Zamfirescu, M. Colocci, S. Sanguinetti, and Richard Nötzel
Phys. Rev. B 73, 085302 – Published 1 February 2006

Abstract

We present time-resolved photoluminescence measurements of InAsGaAs quantum dots showing a relevant interplay between recombination kinetics and thermalization processes. By time-resolved and steady-state measurements we experimentally demonstrate that the thermal population of optically inactive states fully accounts for the increase of the intrinsic radiative lifetime in quantum dots when the lattice temperature raises. Experimental data are compared with model predictions for the electronic structure of the quantum dot, and the dark optical transitions involved in the thermalization nicely correspond to the first-hole-excited levels. In addition, the observation of thermalization between the electronic levels allows us to estimate the relaxation time to the ground state, which turns out to be in the ps time scale.

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  • Received 27 July 2005

DOI:https://doi.org/10.1103/PhysRevB.73.085302

©2006 American Physical Society

Authors & Affiliations

M. Gurioli*, A. Vinattieri, M. Zamfirescu, and M. Colocci

  • CNISM, Department of Physics and LENS, Via Sansone 1, I-50019, Sesto Fiorentino, Italy

S. Sanguinetti

  • CNISM, Dipartimento di Scienza dei Materiali, Universita’ di Milano Bicocca, Via Cozzi 53, I-20125, Milano, Italy

Richard Nötzel

  • eiTT/COBRA Inter-University Research Institute Eindhoven, University of Technology 5600 MB Eindhoven, The Netherlands

  • *Corresponding author. Electronic address: gurioli@lens.unifi.it

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Issue

Vol. 73, Iss. 8 — 15 February 2006

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