Abstract
We report on studies of the surface band structure of clean and unreconstructed surfaces by angle-resolved photoelectron spectroscopy (ARPES). Using light induced desorption of hydrogen from the H-terminated, unreconstructed surfaces we were able to prepare these highly metastable surfaces. On both Si face and C face we observe a surface band with periodicity derived from the unsaturated surface dangling bonds. In both cases the surface band is located below the Fermi level indicating a semiconducting surface. On the (0001) surface the Si dangling bond band is located above the valence-band maximum (VBM), whereas the C dangling bond band is located above the VBM. The dispersion of the surface bands amount to 0.2 and 0.7 eV, respectively. The experimental observations are discussed in the light of earlier theoretical studies on the surface electronic structure of hexagonal SiC surfaces. It is suggested that the electronic properties of these surfaces are governed by strong correlation effects.
4 More- Received 7 October 2005
- Corrected 9 May 2006
DOI:https://doi.org/10.1103/PhysRevB.73.075412
©2006 American Physical Society
Corrections
9 May 2006