Strain determination in MBE-grown InAs quantum wires on InP

A. Mazuelas, L. González, J. M. García, Y. González, T. Schuelli, C. Priester, and H. T. Metzger
Phys. Rev. B 73, 045312 – Published 12 January 2006

Abstract

We have determined the strain in the three crystallographic directions in InAs quantum wires (QWr) grown by molecular beam epitaxy on (001)InP substrate. We used triple crystal x-ray diffraction to make scans along and perpendicular to the QWr direction in reciprocal space, around InP(220) reflections. We use the shape and strain sensitivity of the different scans to deconvolute both contributions. We used the αf scan analysis in grazing incidence diffraction to measure the strain relaxation perpendicular to the QWr as a function of height in the wire. We finally compare these results with finite elements calculations of the strain tensor in InAs QWr on InP.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
3 More
  • Received 28 June 2005

DOI:https://doi.org/10.1103/PhysRevB.73.045312

©2006 American Physical Society

Authors & Affiliations

A. Mazuelas1, L. González2, J. M. García2, Y. González2, T. Schuelli1, C. Priester3, and H. T. Metzger1

  • 1European Synchrotron Radiation Facility (ESRF), BP 220, F-38043 Grenoble, France
  • 2Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, E-28760 Tres Cantos, Spain
  • 3Institut d’Electronique, de Microélectronique et de Nanotechnologie, F-59652 Villeneuve d’Ascq, France

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 73, Iss. 4 — 15 January 2006

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×