Ballistic resistivity in aluminum nanocontacts

A. Hasmy, A. J. Pérez-Jiménez, J. J. Palacios, P. García-Mochales, J. L. Costa-Krämer, M. Díaz, E. Medina, and P. A. Serena
Phys. Rev. B 72, 245405 – Published 5 December 2005

Abstract

We perform a representative series of semiclassical molecular dynamics simulations of aluminum nanocontact breakages, coupled to full quantum conductance calculations. This approach allows to obtain realistic conductance histograms of polyvalent species and understand the origin of their peaked structures. The results show that the conductance depends linearly on the contact minimum cross section for the geometrically favored nanocontact configurations. Valid in a broad range of conductance values, such relation suggests the definition of a transport parameter for the nanoscale, that represents the novel concept of ballistic resistivity.

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  • Received 20 October 2004

DOI:https://doi.org/10.1103/PhysRevB.72.245405

©2005 American Physical Society

Authors & Affiliations

A. Hasmy1, A. J. Pérez-Jiménez2, J. J. Palacios2, P. García-Mochales3, J. L. Costa-Krämer4, M. Díaz1, E. Medina1, and P. A. Serena3

  • 1Centro de Física, IVIC, Apdo. 21827, Caracas 1020A, Venezuela
  • 2Departamento de Física Aplicada, Universidad de Alicante, San Vicente del Raspeig, 03690-Alicante, Spain
  • 3Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049-Madrid, Spain
  • 4Instituto de Microelectrónica de Madrid, CSIC, Isaac Newton 8, PTM, 28760-Tres Cantos, Madrid, Spain

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Vol. 72, Iss. 24 — 15 December 2005

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