Electronic and crystal structures of osmium under high pressure

Yanming Ma, Tian Cui, Lijun Zhang, Yu Xie, Guangtian Zou, John S. Tse, Xing Gao, and Dennis D. Klug
Phys. Rev. B 72, 174103 – Published 7 November 2005

Abstract

The equation of states, electronic and phonon band structure, Fermi surface, and transport properties of Os under high pressure have been studied with first-principles calculations. The theoretical results reproduced the experimentally observed anomaly in the ca ratio around 25GPa. Analysis of the electronic band structure and Fermi surface does not support an electronic topological transition. Moreover, no phonon softening was observed in the lattice dynamics calculations. However, calculations of the Hall coefficient reveal subtle changes in the electron band dispersions at the Fermi surface which may account for the observed anomaly in the ca ratio.

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  • Received 9 July 2005

DOI:https://doi.org/10.1103/PhysRevB.72.174103

©2005 American Physical Society

Authors & Affiliations

Yanming Ma*, Tian Cui, Lijun Zhang, Yu Xie, and Guangtian Zou

  • National Lab of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China

John S. Tse

  • Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Canada S7N 5E2

Xing Gao and Dennis D. Klug

  • Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6

  • *Electronic address: mym@jlu.edu.cn
  • Electronic address: cuitian@jlu.edu.cn

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Issue

Vol. 72, Iss. 17 — 1 November 2005

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