Annealing-induced extension of the antiferromagnetic phase in epitaxial terbium metal films

F. Heigl, J. E. Prieto, O. Krupin, K. Starke, G. Kaindl, and M. Bode
Phys. Rev. B 72, 035417 – Published 6 July 2005

Abstract

The temperature range of helical antiferromagnetic (AFM) order in epitaxially grown Tb metal films on W(110) was studied via ac susceptibility using the magneto-optical Kerr effect. The temperature range of the AFM phase was found to get wider with increasing annealing temperature, reaching a maximum width of 17 K when the film is annealed at Tan=1200K. This shows that the AFM phase is stabilized in epitaxial films as compared to bulk Tb metal. Annealing-induced changes of the surface topography of the films were monitored by scanning tunnel microscope and low-eneregy electron diffraction, revealing a statistical surface roughness for Tan<600K and the formation of large terraces separated by monatomic steps for 600K<Tan<800K. Annealing above 800K results in step bunching, followed by a breakup of the film for Tan>1000K. Both the extension of the AFM phase in the film and the annealing-induced changes of the surface topography can be explained by assuming the presence of a reconstructed Tb monolayer at the film-substrate interface that serves as an effective substrate on which a slightly strained Tb film lattice is stabilized upon annealing.

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  • Received 17 December 2004

DOI:https://doi.org/10.1103/PhysRevB.72.035417

©2005 American Physical Society

Authors & Affiliations

F. Heigl*, J. E. Prieto, O. Krupin, K. Starke, and G. Kaindl

  • Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany

M. Bode

  • Institut für Angewandte Physik, Universität Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany

  • *Present address: University of Western Ontario, London, ON, Canada
  • Corresponding author. Electronic address: starke@physik.fu-berlin.de

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Vol. 72, Iss. 3 — 15 July 2005

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