Systematic treatment of displacements, strains, and electric fields in density-functional perturbation theory

Xifan Wu, David Vanderbilt, and D. R. Hamann
Phys. Rev. B 72, 035105 – Published 5 July 2005

Abstract

The methods of density-functional perturbation theory may be used to calculate various physical response properties of insulating crystals including elastic, dielectric, Born charge, and piezoelectric tensors. These and other important tensors may be defined as second derivatives of an appropriately defined energy functional with respect to atomic-displacement, electric-field, or strain perturbations, or as mixed derivatives with respect to two of these perturbations. The resulting tensor quantities tend to be coupled in complex ways in polar crystals, giving rise to a variety of variant definitions. For example, it is generally necessary to distinguish between elastic tensors defined under different electrostatic boundary conditions, and between dielectric tensors defined under different elastic boundary conditions. Here, we describe an approach for computing all of these various response tensors in a unified and systematic fashion. Applications are presented for two materials, hexagonal ZnO and rhombohedral BaTiO3, at zero temperature.

  • Received 21 January 2005

DOI:https://doi.org/10.1103/PhysRevB.72.035105

©2005 American Physical Society

Authors & Affiliations

Xifan Wu1, David Vanderbilt1, and D. R. Hamann2

  • 1Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
  • 2Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 72, Iss. 3 — 15 July 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×