Spin injection across magnetic/nonmagnetic interfaces with finite magnetic layers

Alexander Khaetskii, J. Carlos Egues, Daniel Loss, Charles Gould, Georg Schmidt, and Laurens W. Molenkamp
Phys. Rev. B 71, 235327 – Published 27 June 2005

Abstract

We have reconsidered the problem of spin injection across ferromagnet/nonmagnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/nonmagnetic-semiconductor (DMS/NMS) interfaces, for structures with finite width d of the magnetic layer (FM or DMS). By using appropriate physical boundary conditions, we find expressions for the resistances of these structures which are in general different from previous results in the literature. When the magnetoresistance of the contacts is negligible, we find that the spin-accumulation effect alone cannot account for the d dependence observed in recent magnetoresistance data. In a limited parameter range, our formulas predict a strong d dependence arising from the magnetic contacts in systems where their magnetoresistances are sizable.

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  • Received 4 January 2004

DOI:https://doi.org/10.1103/PhysRevB.71.235327

©2005 American Physical Society

Authors & Affiliations

Alexander Khaetskii1, J. Carlos Egues1,2, Daniel Loss1, Charles Gould3, Georg Schmidt3, and Laurens W. Molenkamp3

  • 1Department of Physics and Astronomy, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • 2Departamento de Física e Informática, Instituto de Física de São Carlos, Universidade de São Paulo, 13560-970 São Carlos, São Paulo, Brazil
  • 3Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

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Issue

Vol. 71, Iss. 23 — 15 June 2005

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