Phonon-induced exciton spin relaxation in semimagnetic quantum wells

E. Tsitsishvili, R. v. Baltz, and H. Kalt
Phys. Rev. B 71, 155320 – Published 26 April 2005

Abstract

Theoretical results are given for spin relaxation in semimagnetic semiconductor quantum wells due to longitudinal optical (LO) phonon-induced flips of exciton spins at zero temperature and modest magnetic fields. Relaxation in this scenario is due to spin-flip transitions within the heavy-hole exciton subbands which are mediated by the coupling of excitonic spin states via the electron-hole exchange interaction. Relaxation rates are found to depend strongly on a magnetic field, exciton momentum, and size of the quantum well. Results are illustrated by evaluations for the ZnSe-based semimagnetic quantum wells. In longitudinal magnetic fields (Faraday geometry) a maximum in the relaxation rate is found for zero-momentum excitons at a Zeeman splitting of 60meV. In transverse magnetic fields (Voigt geometry) the LO-induced spin relaxation is strongly suppressed.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 20 October 2004

DOI:https://doi.org/10.1103/PhysRevB.71.155320

©2005 American Physical Society

Authors & Affiliations

E. Tsitsishvili* and R. v. Baltz

  • Institut für Theorie der Kondensierten Materie, Universität Karlsruhe, D-76128 Karlsruhe, Germany

H. Kalt

  • Institut für Angewandte Physik, Universität Karlsruhe, D-76128 Karlsruhe, Germany

  • *Permanent address: Institute for Cybernetics, Academy of Science, S. Euli 5, 380086, Georgian Republic.

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 71, Iss. 15 — 15 April 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×