Coverage effects on the magnetism of FeMgO(001) ultrathin films

C. Martínez Boubeta, C. Clavero, J. M. García-Martín, G. Armelles, A. Cebollada, Ll. Balcells, J. L. Menéndez, F. Peiró, A. Cornet, and Michael F. Toney
Phys. Rev. B 71, 014407 – Published 6 January 2005

Abstract

Different aspects of the structure-magnetism and morphology-magnetism correlation in the ultrathin limit are studied in epitaxial Fe films grown on MgO(001). In the initial stages of growth the presence of substrate steps, intrinsically higher than an Fe atomic layer, prevent the connection between Fe islands and hence the formation of large volume magnetic regions. This is proposed as an explanation to the superparamagnetic nature of ultrathin Fe films grown on MgO in addition to the usually considered islanded, or Vollmer-Weber, growth. Using this model, we explain the observed transition from superparamagnetism to ferromagnetism for Fe coverages above 3 monolayers (ML). However, even though ferromagnetism and magnetocrystalline anisotropy are observed for 4 ML, complete coverage of the MgO substrate by the Fe ultrathin films only occurs around 6 ML as determined by polar Kerr spectra and simulations that consider different coverage situations. In annealed 3.5 ML Fe films, shape or configurational anisotropy dominates the intrinsic magnetocrystalline anisotropy, due to an annealing induced continuous to islanded morphological transition. A small interface anisotropy in thicker films is observed, probably due to dislocations observed at the FeMgO(001) interface.

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  • Received 24 February 2004

DOI:https://doi.org/10.1103/PhysRevB.71.014407

©2005 American Physical Society

Authors & Affiliations

C. Martínez Boubeta, C. Clavero, J. M. García-Martín, G. Armelles, and A. Cebollada*

  • Instituto de Microelectrónica de Madrid-IMM (CNM-CSIC), Isaac Newton 8-PTM. 28760 Tres Cantos, Madrid, Spain

Ll. Balcells

  • Instituto de Ciencia de Materiales de Barcelona-ICMAB (CSIC), Campus de la Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalunya, Spain

J. L. Menéndez

  • Institut d’Electronique Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay Cedex, France

F. Peiró and A. Cornet

  • EME Electronic Materials and Engineering, Department Electronics, University of Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain

Michael F. Toney

  • Stanford Synchrotron Radiation Laboratory, 2575 Sand Hill Rd., M/S 69, Menlo Park, California 94025, USA

  • *Electronic address: alfonso@imm.cnm.csic.es

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Issue

Vol. 71, Iss. 1 — 1 January 2005

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