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Hybridization of Cr 3dN 2pGa 4s in the wide band-gap diluted magnetic semiconductor Ga1xCrxN

J. J. Kim, H. Makino, K. Kobayashi, Y. Takata, T. Yamamoto, T. Hanada, M. W. Cho, E. Ikenaga, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, S. Shin, and T. Yao
Phys. Rev. B 70, 161315(R) – Published 29 October 2004

Abstract

We observed that Cr doping introduces an electronic state in the band gap in Ga1xCrxN by using hard x-ray photoemission spectroscopy. Based on first-principles calculations, the electronic state is interpreted to be dominantly Ga 4s originated states. The chemical effect of Cr up to the second-nearest-neighbor Ga atoms has also been observed in the core-level spectra of Ga 2p32. The present results evidence that the Ga valence electrons are strongly affected by the second-nearest-neighbor Cr atoms through Cr 3dGa 4s hybridization.

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  • Received 27 August 2004

DOI:https://doi.org/10.1103/PhysRevB.70.161315

©2004 American Physical Society

Authors & Affiliations

J. J. Kim1, H. Makino2, K. Kobayashi3, Y. Takata4, T. Yamamoto5, T. Hanada2, M. W. Cho2, E. Ikenaga3, M. Yabashi3, D. Miwa4, Y. Nishino4, K. Tamasaku4, T. Ishikawa4, S. Shin4, and T. Yao1,2

  • 1Center for Interdisciplinary Research, Tohoku University, Aramaki-Aza-Aoba, Aoba-ku, Sendai 980-8578, Japan
  • 2Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 3JASRI/SPring-8, 1-1-1 Kouto, Mikazuki-cho, Sayo-gun, Hyogo 679-5198, Japan
  • 4RIKEN/SPring-8, 1-1-1 Kouto, Mikazuki-cho, Sayo-gun, Hyogo 679-5148, Japan
  • 5Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kamigun, Kochi 782-8502, Japan

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Issue

Vol. 70, Iss. 16 — 15 October 2004

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