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Strongly non-Arrhenius self-interstitial diffusion in vanadium

Luis A. Zepeda-Ruiz, Jörg Rottler, Seungwu Han, Graeme J. Ackland, Roberto Car, and David J. Srolovitz
Phys. Rev. B 70, 060102(R) – Published 31 August 2004

Abstract

We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular-dynamics simulations. The ⟨111⟩-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other ⟨111⟩ directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T<600K, this behavior arises from temperature-dependent correlations. At T>600K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T.

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  • Received 7 July 2004

DOI:https://doi.org/10.1103/PhysRevB.70.060102

©2004 American Physical Society

Authors & Affiliations

Luis A. Zepeda-Ruiz1,2,*, Jörg Rottler1, Seungwu Han1,†, Graeme J. Ackland3, Roberto Car1, and David J. Srolovitz1

  • 1Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08544, USA
  • 2Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, P.O. Box 808, L-371, Livermore, California 94550, USA
  • 3School of Physics, University of Edinburgh, Edinburgh EH9 3JZ, United Kingdom

  • *Corresponding author. Email address: zepedaruiz1@11n1.gov
  • Current address: Department of Physics, Ewha Womans University, Seoul 120-750, Korea.

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Issue

Vol. 70, Iss. 6 — 1 August 2004

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