Absorption from Neutral Acceptors in GaAs and GaP

We present a new calculation of the absorption due to transitions of holes between neutral acceptors and the various valence-band sublevels in GaAs and GaP. The acceptor wave function was approximated by a previously suggested expression for ground-state wave functions appropriate to complicated band extrema. Numerical calculations of the absorption from intervalence-band transitions of free holes and neutral acceptors have been performed. Good agreement with experimental results is obtained.