Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa1xAs devices

R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky
Phys. Rev. B 69, 193304 – Published 21 May 2004
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Abstract

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov–de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron are evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations

  • Received 3 March 2003

DOI:https://doi.org/10.1103/PhysRevB.69.193304

©2004 American Physical Society

Authors & Affiliations

R. G. Mani1,*, J. H. Smet2, K. von Klitzing2, V. Narayanamurti1,3, W. B. Johnson4, and V. Umansky5

  • 1Harvard University, Gordon McKay Laboratory of Applied Science, 9 Oxford Street, Cambridge, Massachusetts 02138, USA
  • 2Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
  • 3Harvard University, 217 Pierce Hall, 29 Oxford Street, Cambridge, Massachusetts 02138, USA
  • 4Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740, USA
  • 5Braun Center for Submicron Research, Weizmann Institute, Rehovot 76100, Israel

  • *Electronic address: mani@deas.harvard.edu

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Vol. 69, Iss. 19 — 15 May 2004

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