Bilayer splitting and coherence effects in optimal and underdoped Bi2Sr2CaCu2O8+δ

Y.-D. Chuang, A. D. Gromko, A. V. Fedorov, Y. Aiura, K. Oka, Yoichi Ando, M. Lindroos, R. S. Markiewicz, A. Bansil, and D. S. Dessau
Phys. Rev. B 69, 094515 – Published 22 March 2004
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Abstract

We have carried out extensive high-resolution angle-resolved photoemission (ARPES) experiments on Bi2Sr2CaCu2O8+δ samples, covering the entire doping range from the overdoped to the optimally and underdoped regimes in the normal state. Our focus is on delineating the doping dependence of the bilayer splitting which is associated with the intracell coupling of electrons between the two CuO2 planes. We exploit the photon energy of 47 eV, where strong ARPES matrix element effects are found to provide a tremendous enhancement of the antibonding to bonding component of the bilayer split bands near (π,0), in good agreement with the predictions of corresponding first-principles simulations. Our detailed analysis indicates that the size of the bilayer splitting is only weakly dependent on the doping level, implying that electronic excitations continue to maintain some degree of coherence even in the underdoped regime.

  • Received 9 January 2003

DOI:https://doi.org/10.1103/PhysRevB.69.094515

©2004 American Physical Society

Authors & Affiliations

Y.-D. Chuang1,2, A. D. Gromko1, A. V. Fedorov1,2, Y. Aiura3, K. Oka3, Yoichi Ando4, M. Lindroos5,6, R. S. Markiewicz5, A. Bansil5, and D. S. Dessau1

  • 1Department of Physics, University of Colorado, Boulder, Colorado 80309-0390, USA
  • 2Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 3National Institute for Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • 4Central Research Institute of Electric Power Industry (CRIEPI), 2-11-1 Iwato-Kita, Komae, Tokyo 201-8511, Japan
  • 5Physics Department, Northeastern University, Boston, Massachusetts 02115, USA
  • 6Tampere University of Technology, P.O. Box 692, SF-33101, Tampere, Finland

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Vol. 69, Iss. 9 — 1 March 2004

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