Tunable variation of the electron effective mass and exciton radius in hydrogenated ${\mathrm{GaAs}}_{1-x}{\mathrm{N}}_x$

Magnetophotoluminescence measurements show that the electron effective mass and the exciton radius in hydrogen irradiated ${\mathrm{GaAs}}_{1-x}{\mathrm{N}}_x$ vary continuously as a function of the hydrogen dose until they recover the values of N-free GaAs. First-principles calculations account for the experimental findings through the formation of a specific N-dihydrogen complex, which leads to the removal of the electron localization caused by N incorporation into GaAs.