Multiple charge-density waves in R5Ir4Si10 (R=Ho, Er, Tm, and Lu)

Sander van Smaalen, Mohammad Shaz, Lukas Palatinus, Peter Daniels, Federica Galli, Gerard J. Nieuwenhuys, and J. A. Mydosh
Phys. Rev. B 69, 014103 – Published 22 January 2004
PDFExport Citation

Abstract

The charge-density-wave (CDW) transitions in compounds R5Ir4Si10 (R=rareearth element) have been studied by x-ray-diffraction and electrical conductivity experiments for temperatures between 20 and 300 K. At TCDW incommensurate CDW’s [q=(±0.25±δ)c* with δ0.03] develop in compounds with R=Ho, Er, Tm, and (Lu0.16Er0.84), while commensurate CDW’s [q=(n/7)c*] develop in compounds with R=Lu and (Lu0.34Er0.66). TCDW varies between 83 K in R=Lu and 161.4 K in R=Ho. The compounds with an incommensurate CDW exhibit a second transition at Tlockin<TCDW, with Tlockin between 55 K in R=Er and 111.5 K in R=Tm. In Ho5Ir4Si10 and Er5Ir4Si10 this is a pure lock-in transition at which δ becomes zero. In Tm5Ir4Si10 and (Lu0.16Er0.84)5Ir4Si10δ also becomes zero, but below Tlockin additional satellite reflections have been discovered, at commensurate positions (n/8)c* in Tm5Ir4Si10 and at incommensurate positions (n/8±δ2)c* with δ20.01 in (Lu0.16Er0.84)5Ir4Si10. The development of this second CDW can be understood by a two-step mechanism similar to the mechanism for the development of the primary CDW in Er5Ir4Si10 [Galli et al., Phys. Rev. Lett. 85, 158 (2000)]. At Tlockin the primary CDW becomes commensurate, leading to a partly restoration of the Fermi surface, as evidenced by an anomalous decrease of the electrical resistivity for T below Tlockin in Ho5Ir4Si10 and Er5Ir4Si10. The modified Fermi surface then provides the favorable nesting conditions for the development of a second CDW in Tm5Ir4Si10 and (Lu0.16Er0.84)5Ir4Si10. The electronic character of this transition is suggested by the anomalous increase of the resistivity for T below Tlockin.

  • Received 7 October 2003

DOI:https://doi.org/10.1103/PhysRevB.69.014103

©2004 American Physical Society

Authors & Affiliations

Sander van Smaalen1,*, Mohammad Shaz1, Lukas Palatinus1, Peter Daniels1, Federica Galli2, Gerard J. Nieuwenhuys2, and J. A. Mydosh2,†

  • 1Laboratory of Crystallography, University of Bayreuth, 95440 Bayreuth, Germany
  • 2Kamerlingh Onnes Laboratory, University of Leiden, Leiden, The Netherlands

  • *Electronic address: smash@uni-bayreuth.de; URL http://www.uni-bayreuth.de/departments/crystal/
  • Also at the Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.

References (Subscription Required)

Click to Expand
Issue

Vol. 69, Iss. 1 — 1 January 2004

Reuse & Permissions
Access Options

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×