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Raman spectroscopy of silicon nanowires

S. Piscanec, M. Cantoro, A. C. Ferrari, J. A. Zapien, Y. Lifshitz, S. T. Lee, S. Hofmann, and J. Robertson
Phys. Rev. B 68, 241312(R) – Published 24 December 2003
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Abstract

We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how previous spectra were inconsistent with phonon confinement, but were due to intense local heating caused by the laser. This is peculiar to nanostructures, and would require orders of magnitude more power in bulk Si. By working at very low laser powers, we identify the contribution of pure confinement typical of quantum wires.

  • Received 29 July 2003

DOI:https://doi.org/10.1103/PhysRevB.68.241312

©2003 American Physical Society

Authors & Affiliations

S. Piscanec1, M. Cantoro1, A. C. Ferrari1,*, J. A. Zapien2, Y. Lifshitz2, S. T. Lee2, S. Hofmann1, and J. Robertson1

  • 1Engineering Department, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
  • 2Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China

  • *Email address: acf26@eng.cam.ac.uk

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Vol. 68, Iss. 24 — 15 December 2003

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