Abstract
Originally n-type Si-doped GaAs turns p-type after Li indiffusion and consequent annealing at Temperature-dependent conductivity and Hall effect measurements carried out in the temperature range 30–300 K reveal conduction via impurity bands made up of shallow acceptors in addition to the valence-band conduction. Li diffusion into GaAs reduces the free-carrier concentration which leads to electrical resistivity as high as Annealing highly resistive samples at temperatures above significantly decreases the room-temperature resistivity to 0.1–1 depending on the annealing temperature. For samples annealed at we observe a metallic-type conduction which contributes to the conduction even at room temperature. In samples annealed at the temperature dependence of the resistivity indicates that impurity conduction sets in at temperatures below 100 K. We discuss this conduction change in relation to enhanced gallium vacancy and gallium antisite concentration in Li indiffused and annealed samples.
- Received 20 March 2003
DOI:https://doi.org/10.1103/PhysRevB.67.205213
©2003 American Physical Society