Qubits with electrons on liquid helium

M. I. Dykman, P. M. Platzman, and P. Seddighrad
Phys. Rev. B 67, 155402 – Published 3 April 2003
PDFExport Citation

Abstract

We study dissipation effects for electrons on the surface of liquid helium, which may serve as the qubits of a quantum computer. Each electron is localized in a 3D potential well formed by the image potential in helium and the potential from a submicron electrode submerged into helium. We estimate parameters of the confining potential and characterize the electron energy spectrum. Decay of the excited electron state is due to two-ripplon scattering and to scattering by phonons in helium. We identify mechanisms of coupling to phonons. An estimate of contributions from different scattering mechanisms shows that the decay rate should be 104s1. We analyze dephasing of the electron states due to quasielastic ripplon scattering off an electron. The dephasing rate is 102s1 for T=10mK and depends on temperature as T3. Decay and decoherence of the electron states result also from classical and quantum electrode noise. We relate the corresponding relaxation rates to the power spectrum of the fluctuating electric field on the electron. The dependence of the rates on the electrode parameters is obtained.

  • Received 28 August 2002

DOI:https://doi.org/10.1103/PhysRevB.67.155402

©2003 American Physical Society

Authors & Affiliations

M. I. Dykman1,*, P. M. Platzman2, and P. Seddighrad1

  • 1Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824
  • 2Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974

  • *Electronic address: dykman@pa.msu.edu

References (Subscription Required)

Click to Expand
Issue

Vol. 67, Iss. 15 — 15 April 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×