Abstract
Using planar theory of ballistic electron emission spectroscopy with the addition of scattering at the metal-semiconductor interface, we calculate an expected change in the ratio of the collector current to the tunnel current as is varied in the well-known system Au/GaAs(100). This alternative spectroscopy is performed experimentally and is shown to differ drastically from the theory, which nevertheless agrees well with standard voltage spectroscopy. From this discrepancy, we question the applicability of one-dimensional (1D) planar theory to an inherently 3D system.
- Received 18 November 2002
DOI:https://doi.org/10.1103/PhysRevB.67.155307
©2003 American Physical Society