Angular dependence of domain wall resistivity in SrRuO3 films

Michael Feigenson, Lior Klein, James W. Reiner, and Malcolm R. Beasley
Phys. Rev. B 67, 134436 – Published 30 April 2003
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Abstract

SrRuO3 is a 4d itinerant ferromagnet (Tc150K) with stripe domain structure. Using high-quality thin films of SrRuO3 we study the resistivity induced by its very narrow (∼3 nm) Bloch domain walls ρDW (DWR), at temperatures between 2 K and Tc as a function of the angle θ between the electric current and the ferromagnetic domains walls. We find that ρDW(T,θ)=sin2θρDW(T,90)+B(θ)ρDW(T,0), which provides the first experimental indication that the angular dependence of spin accumulation contribution to DWR is sin2θ. We expect magnetic multilayers to exhibit a similar behavior.

  • Received 21 January 2003

DOI:https://doi.org/10.1103/PhysRevB.67.134436

©2003 American Physical Society

Authors & Affiliations

Michael Feigenson and Lior Klein

  • Physics Department, Bar Ilan University, Ramat Gan 52900, Israel

James W. Reiner* and Malcolm R. Beasley

  • T. H. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305

  • *Present address: Department of Applied Physics, Yale University, New Haven, Connecticut 06520-8284

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Vol. 67, Iss. 13 — 1 April 2003

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