Abstract
We present ab initio pseudopotential–density-functional calculations for the electronic structure of the dilute magnetic semiconductor with a realistic in its ordered ferromagnetic phase. We find that the introduction of Mn results in the formation of a 100% spin polarized -wide impurity band, primarily due to hybridization of Mn and N orbitals. This band renders the material half metallic and supports effective-mass transport within it. As such, is a highly suitable material for spin injectors. Coupled with the previously reported high Curie temperature and inherent compatibility with GaN technology of this material, it emerges as a serious candidate for the next generation of spintronic devices.
- Received 12 October 2001
DOI:https://doi.org/10.1103/PhysRevB.66.041203
©2002 American Physical Society